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Process | Calculation of Electric Field | Results & Discussions | References &
Appendix |
References:
o A. Maiti, C. J. Brabec, C. Roland, and J. Bernholc, Theory of Carbon Nanotube Growth, Physical Review B, Volume 52, Number 20, 15 November 1995-II.
o
B. Sun, Z. Suo,
W. Yang, A Finite Element Method for Simulating Interface Motion--I. Migration
of Phase and Grain Boundaries. Acta
Matter. 45, 1907-1915 (1997).
o
Byung-Nam Kim,
Two-dimensional finite element simulation of grain boundary migration for embedded
symmetric grains Computational Materials
Science 18 (2000) 177-184.
o
David
Hash, Deepak Bose, T. R. Govindan, and M. Meyyappan, Simulation of the dc
plasma in carbon nanotube growth, Journal
Of Applied Physics Volume 93, Number 10,
o
Krupke et al. Science, 301, 2003 (344-347).
o M. Meyyappan and D. Srivastava, Carbon Nanotube -A big Revolution in a Technology that Thinks Very, Very, Very Small, IEEE Potentials, Augaust/September 2000, 16-18.
o Noggle, Physical Chemistry, Harper-Collins 1996.
o
Takeshi
Kawano, Dane Christensen, Supin Chen, Chung Yeung Cho, and Liwei Lin, Formation
and characterization of silicon/carbon nanotube/silicon heterojunctions by
local synthesis and assembly. Applied
Physics Letters 89, 163510 _2006.
o
Z. S. Nikolic,
Computer simulation of grain growth by grain boundary migration during liquid
phase sintering. Journal Of Materials
Science 34 (1999) 783– 794.
Appendix:
The
complete matlab codes used for the simulation are here.
Note:
The codes must be run from Matlab window with COMSOL access.