Abstract

       Self-assembled quantum dots on a solid substrate hold promise for many applications ranging from single electron transistors to molecular electronics, quantum dot lasers, and quantum computing. In this project, we present a three-dimensional finite element scheme to simulate the growth process of quantum dots under both surface diffusion and interface migration. Results include the nucleation process of QD from rough surface, growth process in the early stage and also coarsening process. The fourth-order Runge-Kutta method is used to improve the numerical stability. Besides, the normalization of the governing equation also provides a tool to study the effect of each free energy contributor.

    Members
Zhouzhou Zhao (zzzhao@umich.edu)
Michael Luginbill (lugimich@umich.edu)

    Advisor
Professor Wei Lu (weilu@umich.edu)